FDS6670AS_10 Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET™

Typical Characteristics (continued)
10
I_D =13.5A
8
6
V_DS = 10V
20V
15V
4
2
0
0
5
10
15
20
25
30
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
100Ps
1ms
10ms
100ms
1s
10s
DC
V_GS = 10V
0.1 SINGLE PULSE
R_TJA = 125^oC/W
T_A = 25^oC
0.01
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2400
1800
1200
f = 1MHz
V_GS = 0 V
C_iss
C_oss
600
C_rss
0
0
5
10
15
20
25
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R_TJA = 125°C/W
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t₁, TIME (sec)
R_TJA(t) = r(t) * R_TJA
R_TJA = 125 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_TJA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
©2010 Fairchild Semiconductor Corporation
5
FDS6670AS Rev.C1
www.fairchildsemi.com