FDS6670AS_10 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET™

July 2010
FDS6670AS
30V N-Channel PowerTrench^“ SyncFET^™
General Description
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
x DC/DC converter
x Low side notebook
Features
x 13.5 A, 30 V. R_DS(ON) max= 9.0 m: @ V_GS = 10 V
R_DS(ON) max= 11.5 m: @ V_GS = 4.5 V
x Includes SyncFET Schottky body diode
x Low gate charge (27nC typical)
x High performance trench technology for extremely low
R_DS(ON) and fast switching
x High power and current handling capability
x RoHS Compliant
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_TJA
Thermal Resistance, Junction-to-Ambient
R_TJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6670AS
FDS6670AS
13’’
5
6
7
8
Ratings
30
r20
13.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
qC
qC/W
qC/W
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDS6670AS Rev.C1
www.fairchildsemi.com