FDR8702H Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 20V N & P-Channel PowerTrench MOSFET

Typical Characteristics : Q1
5
I_D = 3.6A
4
3
2
1
0
0
2
V_DS = 5V
10V
15V
4
6
8
10
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
V_GS = 4.5V
SINGLE PULSE
0.1 _{RθJA = 146}o_C/W
T_A = 25^oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1000
800
C_ISS
600
f = 1 MHz
V_GS = 0 V
400
C_OSS
200
C_RSS
0
0
5
10
15
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R_θJA = 146°C/W
40
T_A = 25°C
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.01
0.1
1
t₁, TIME (sec)
R_θJA(t) = r(t) * R_θJA
R_θJA = 146^oC/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
1000
FDR8702H Rev C (W)