FDR8702H Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 20V N & P-Channel PowerTrench MOSFET

March 2003
FDR8702H
20V N & P-Channel PowerTrench^ MOSFET
General Description
Features
These N & P-Channel MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially
tailored to minimize on-state resistance and yet
maintain superior switching performance.
Applications
DC/DC converter
Power management
• N channel
3.6 A, 20V
R_DS(ON) = 38 mΩ @ V_GS = 4.5 V
R_DS(ON) = 54 mΩ @ V_GS = 2.5 V
• P channel
–2.6 A, –20V
R_DS(ON) = 80 mΩ @ V_GS = –4.5 V
R_DS(ON) = 110 mΩ @ V_GS = –2.5 V
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON)
D
D
D
D
S2
G2
TM
S1
SuperSOT -8 ^G1
Q2(P)
5
44
6
33
Q1(N)
7
22
8
11
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current– Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.8702
FDR8702H
13’’
Ratings
Q1 (N)
20
Q2 (P)
–20
±12
±8
3.6
–2.6
15
–10
0.8
–55 to +150
Units
V
V
A
W
°C
146
°C/W
76
40
Tape width
12mm
Quantity
2500 units
2003 Fairchild Semiconductor Corp.
FDR8702H Rev C (W)