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| FDP6670AS_08 Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench® SyncFET™ | |||
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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchildâs SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670AS.
TIME: 12.5ns/div
Figure 12. FDP6670AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
0.00001
0
TA = 25oC
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
FDP6670AS/FDB6670AS Rev A2 (X)
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