FDP6670AS_08 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench® SyncFET™

Typical Characteristics
150
V_GS = 10V
4.5V
6.0V
120
5.0V
4.0V
90
3.5V
60
30
3.0V
0
0
1
2
3
4
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
V_GS = 3.5V
1.6
1.4
4.0V
1.2
1
4.5V
5.0V
6.0V
10V
0.8
0
30
60
90
120
150
I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I_D = 31A
V_GS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75
100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.022
0.017
0.012
T_A = 125^oC
I_D = 15.5A
0.007
T_A = 25^oC
0.002
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
80
V_DS = 5V
60
40
T_A = 125^oC
20
-55^oC
25^oC
0
1.5
2
2.5
3
3.5
4
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10 _{VGS = 0V}
1
T_A = 125^oC
25^oC
0.1
-55^oC
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670AS/FDB6670AS Rev A2 (X)