FDMC86116LZ Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ

Typical Characteristics T_J = 25 °C unless otherwise noted
500
100
10
1
0.5
10^-4
SINGLE PULSE
R_θJA = 125 ^oC/W
T_A = 25 ^oC
10^-3
10^-2
10^-1
1
t, PULSE WIDTH (sec)
10
100
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10^-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R_θJA = 125 ^oC/W
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJA x R_θJA + T_A
10^-3
10^-2
10^-1
1
10
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2011 Fairchild Semiconductor Corporation
5
FDMC86116LZ Rev.C
www.fairchildsemi.com