FDMC86116LZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ

FDMC86116LZ
N-Channel Power Trench^® MOSFET
100 V, 7.5 A, 103 mΩ
December 2011
Features
General Description
„ Max r_DS(on) = 103 mΩ at V_GS = 10 V, I_D = 3.3 A
„ Max r_DS(on) = 153 mΩ at V_GS = 4.5 V, I_D = 2.7 A
„ HBM ESD protection level > 3 KV typical (Note 4)
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench^® process
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
„ DC - DC Conversion
Top
Bottom
8765
DD D D
S
D
S
D
S
D
G
D
1 234
GS S S
MLP 3.3x3.3
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
7.5
9.6
3.3
15
12
19
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
6.5
(Note 1a)
53
°C/W
Device Marking
FDMC86116Z
Device
FDMC86116LZ
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMC86116LZ Rev.C
www.fairchildsemi.com