FDD850N10LD Datasheet, PDF (5/11 Pages) Fairchild Semiconductor – BoostPak (N-Channel PowerTrench® MOSFET + Diode)

Typical Performance Characteristics - MOSFET (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. V_GS = 0V
2. I_D = 250μA
-50
0
50 100 150 200
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
100
10
100μs
1
0.1
0.01
0.1
Operation in This Area
is Limited by R _DS(on)
*Notes:
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
1ms
10ms
100ms
DC
1
10
V_DS, Drain-Source Voltage [V]
100 200
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. V_GS = 10 V
2. I_D = 12 A
-50
0
50 100 150 200
T_J, Junction Temperature [^oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
18
15
12
V_GS = 10V
9
V_GS = 5V
6
3
R_θJC = 3.0^oC/W
0
25
50
75
100
125
150
T_C, Case Temperature [^oC]
©2013 Fairchild Semiconductor Corporation
5
FDD850N10LD Rev. C2
www.fairchildsemi.com