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FDD850N10LD Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – BoostPak (N-Channel PowerTrench® MOSFET + Diode)
November 2013
FDD850N10LD
BoostPak (N-Channel PowerTrench® MOSFET + Diode)
100 V, 15.3 A, 75 mΩ
Features
• RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A
• RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A
• Low Gate Charge (Typ. 22.2 nC)
• Low Crss (Typ. 42 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop
and excellent switching performance.
Applications
• LED Monitor Backlight
• LED TV Backlight
• LED Lighting
• Consumer Appliances,
DC-DC converter (Step up & Step down)
3
3
1. Gate
2. Source
3. Drain / Anode
4. Cathode
12
5. Cathode
1
4 5 TO252-5L
Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
IF(AV)
IFSM
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Diode Average Rectified Forward Current (TC = 138oC)
Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case for MOSFET, Max.
Thermal Resistance, Junction to Case for Diode, Max.
Thermal Resistance, Junction to Ambient, Max.
4,5
2
FDD850N10LD
100
±20
15.3
9.7
46
41
6.0
42
0.33
5
50
-55 to +150
300
FDD850N10LD
3.0
2.5
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
A
A
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
1
FDD850N10LD Rev. C2
www.fairchildsemi.com