TIL111 Datasheet, PDF (4/14 Pages) QT Optoelectronics – PHOTOTRANSISTOR OPTOISOLATOR

GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
TIL111
TIL111-M
TIL117-M
MOC8100-M
TRANSFER CHARACTERISTICS (T_A = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min
Current Transfer Ratio,
Collector to Emitter
(I_F = 10 mA, V_CE = 10 V)
TIL117-M 50
(I_F = 1 mA, V_CE = 5 V)
CTR_{CE MOC8100-M} 50
(I_F = 1 mA, V_CE = 5 V, T_A = 0 to +70°C)
30
On-State Collector Current
(Phototransistor Operation)
On-State Collector Current
(Photodiode Operation)
(I_F = 16 mA, V_CE = 0.4 V)
(I_F = 16 mA, V_CB = 0.4V)
2
I_C(ON)
TIL111
TIL111-M
7
Collector-Emitter Saturation
Voltage
(I_C = 500 µA, I_F = 10 mA)
(I_C = 2 mA, I_F = 16 mA)
V_{CE (SAT)}
TIL117-M
TIL111
TIL111-M
(I_C = 100 µA, I_F = 1 mA)
MOC8100-M
AC Characteristic
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Rise Time
(Phototransistor Operation)
Fall Time
(Phototransistor Operation)
(I_C = 2 mA, V_CC = 10 V,
R_L = 100Ω) (Fig. 20)
(I_C(ON) = 2 mA, V_CC = 10 V,
R_L = 100Ω) (Fig. 20)
T_ON
T_OFF
t_r
t_f
t_r
t_f
MOC8100-M
TIL117-M
MOC8100-M
TIL117-M
MOC8100-M
TIL117-M
TIL111
TIL111-M
Typ*
2
2
Max Unit
%
%
mA
µA
0.4
0.4 V
0.5
20
µs
10
20
µs
10
µs
10 µs
* Typical values at T_A = 25°C
© 2003 Fairchild Semiconductor Corporation
Page 4 of 14
6/30/03