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| TIL111 Datasheet, PDF (3/14 Pages) QT Optoelectronics – PHOTOTRANSISTOR OPTOISOLATOR | |||
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GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
TIL111
TIL111-M
TIL117-M
MOC8100-M
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise speciï¬ed)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Device
Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage
(IF = 16 mA) (TA = 25°C) TIL111/TIL111-M
(IF = 10 mA; for (TA = 0-70°C)
MOC8100-M)
(IF = 16 mA; for
(TA = -55°C)
MOC8100-M/
TIL117-M
VF
TIL117-M) (TA = +100°C)
1.2 1.4
1.2 1.4
V
1.32
1.10
Reverse Leakage Current
DETECTOR
(VR = 3.0 V)
TIL111/TIL111-M/
TIL117-M
IR
(VR = 6.0V) MOC8100-M
0.001 10 µA
0.001 10 µA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(IC = 1.0 mA, IF = 0)
All
BVCEO 30 100
V
(IC = 10 µA, IF = 0)
All
BVCBO 70 120
V
(IE = 10 µA, IF = 0)
All
BVEBO 7
10
V
(IF = 100µA, IF = 0)
TIL111-M
TIL117-M
BVECO 7
10
V
(VCE = 10 V, IF = 0)
TIL111/TIL111-M/
TIL117-M
ICEO
1 50 nA
Collector-Emitter Dark Current
(VCE = 5V, TA = 25°C)
(VCE = 30 V, IF = 0, TA = 70°C)
MOC8100-M
TIL117-M/
MOC8100-M
ICEO
ICEO
0.5 25 nA
0.2 50 µA
Collector-Base Dark Current
Capacitance
(VCB = 10 V)
TIL111/TIL111-M/
TIL117-M
(VCB = 5 V)
(VCE = 0 V, f = 1 MHz)
MOC8100-M
All
ICBO
ICBO
CCE
20 nA
10 nA
8
pF
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions Symbol Min
(Non â-Mâ, Black Package) (f = 60 Hz, t = 1 min)
(â-Mâ, White Package) (f = 60 Hz, t = 1 sec)
(VI-O = 500 VDC)
(VI-O = 0, f = 1 MHz)
VISO
RISO
CISO
5300
7500
1011
Typ*
Max
2
Units
Vac(rms)
Vac(pk)
â¦
pF
Note
* Typical values at TA = 25°C unless otherwise noted
© 2003 Fairchild Semiconductor Corporation
Page 3 of 14
6/30/03
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