SI6943DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
5
I_D = -2.5A
4
3
2
1
0
0
1
V_DS = -4V
-6V
-8V
2
3
4
5
6
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
V_GS = -4.5V
SINGLE PULSE
0.1 _{RθJA = 125}o_C/W
T_A = 25^oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
800
f = 1 MHz
V_GS = 0 V
600
C_ISS
400
200
C_OSS
C_RSS
0
0
3
6
9
12
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
0.1
SINGLE PULSE
R_θJA = 125°C/W
T_A = 25°C
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t₁, TIME (sec)
R_θJA(t) = r(t) * R_θJA
R_θJA = 125^oC/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6943DQ Rev. B (W)