SI6943DQ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
12
V_GS = -4.5V
-3.5V
9
6
3
-3.0V
-2.5V
-2.0V
0
0
1
2
3
4
5
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
I_D = -2.5A
V_GS = -4.5V
1.3
1.1
0.9
0.7
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
8
V_DS= -5V
6
4
T_A = -55^oC
25^oC
125^oC
2
0
0.5
1
1.5
2
2.5
3
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.8
1.6
V_GS= - 2.5V
1.4
1.2
1
-3.0V
-3.5V
-4.0V
-4.5V
0.8
0
3
6
9
12
-I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.35
I_D = -1.3A
0.3
0.25
0.2
0.15
T_A = 25^oC
T_A = 125^oC
0.1
0.05
1
2
3
4
5
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V_GS = 0V
1
T_A = 125^oC
0.1
25^oC
-55^oC
0.01
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6943DQ Rev. B (W)