SI6466DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

Typical Characteristics
5
I_D = 7.8A
4
3
V_DS = 5V
10V
15V
2
1
0
0
4
8
12
16
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
100us
10
1ms
10ms
100ms
1s
1
10s
DC
V_GS = 4.5V
0.1
SINGLE PULSE
R_θJA = 114^oC/W
T_A = 25^oC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2100
1800
1500
1200
900
600
300
0
0
C_ISS
f = 1MHz
V_GS = 0 V
C_OSS
C_RSS
5
10
15
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R_θJA = 114°C/W
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R_θJA(t) = r(t) * R_θJA
R_θJA =114 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6466DQ Rev C(W)