SI6466DQ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

November 2001
Si6466DQ
20V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (2.5V to 12V).
Applications
• Battery protection
• DC/DC conversion
• Power management
• Load switch
Features
• 7.8 A, 20 V
RDS(ON) = 15 mΩ @ VGS = 4.5 V
RDS(ON) = 22 mΩ @ VGS = 2.5 V
• Extended VGSS range (±12V) for battery applications
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
G
S
S
D
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
6466
Si6466DQ
13’’
5
6
7
8
Ratings
20
± 12
7.8
30
1.4
1.1
–55 to +150
87
114
Tape width
16mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
Si6466DQ Rev C(W)