SI6463DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
5
ID = -8.8A
4
3
2
1
0
0
10
VDS = -5V
-10V
-15V
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
10ms
100ms
1s
10s
DC
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 208^oC/W
TA = 25^oC
0.01
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
8000
7000
6000
5000
4000
3000
2000
1000
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
3
6
9
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
0.1
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 208 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6463DQ Rev. A(W)