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SI6463DQ Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET | |||
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
DrainâSource Breakdown Voltage VGS = 0 V, ID = â250 µA
â20
âBVDSS
âTJ
Breakdown Voltage Temperature
Coefficient
ID = â250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current VDS = â16 V, VGS = 0 V
IGSSF
GateâBody Leakage, Forward
VGS = â12 V, VDS = 0 V
IGSSR
GateâBody Leakage, Reverse
VGS = 12 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
âVGS(th)
âTJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static DrainâSource
OnâResistance
ID(on)
OnâState Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = â250 µA
ID = â250 µA, Referenced to 25°C
â0.6
VGS = â4.5 V, ID = â8.8 A
VGS = â2.5 V, ID = â7.2 A
VGS = â4.5 V, ID = â8.8 A, TJ= 125°C
VGS = â4.5 V, VDS = â5 V
â50
VDS = â10 V, ID = â8.8 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = â10 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on)
TurnâOn Delay Time
tr
TurnâOn Rise Time
td(off)
TurnâOff Delay Time
tf
TurnâOff Fall Time
Qg
Total Gate Charge
Qgs
GateâSource Charge
Qgd
GateâDrain Charge
(Note 2)
VDD = â10 V,
VGS = â4.5 V,
ID = â1 A,
RGEN = 6 â¦
VDS = â10 V,
VGS = â4.5 V
ID = â8.8 A,
DrainâSource Diode Characteristics and Maximum Ratings
IS
Maximum Continuous DrainâSource Diode Forward Current
VSD
DrainâSource Diode Forward
Voltage
VGS = 0 V, IS = â1.2 A (Note 2)
â12
â0.8
3.5
10
14
13
46
5045
1035
549
8
14
130
80
41
7
11
â0.6
â1
â100
100
â1.5
12.5
18
19
16
25
208
128
66
â1.2
â1.2
V
mV/°C
µA
nA
nA
V
mV/°C
mâ¦
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si6463DQ Rev. A(W)
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