SI6415DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

Typical Characteristics
10
I_D = -6.4A
8
6
V_DS = -5V
-10V
-15V
4
2
0
0
6
12
18
24
30
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
V_GS = -10V
0.1
SINGLE PULSE
R_θJA = 114^oC/W
T_A = 25^oC
100us
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2500
2000
1500
f = 1 MHz
V_GS = 0 V
C_ISS
1000
500
C_OSS
C_RSS
0
0
5
10
15
20
25
30
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
R_θJA = 114°C/W
T_A = 25°C
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R_θJA(t) = r(t) * R_θJA
R_θJA =114 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6415DQ Rev B(W)