SI6415DQ Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage V_GS = 0 V, I_D = –250 µA
–30
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V, VDS = 0 V
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V, VDS = 0 V
V
–21
mV/°C
–1
µA
100 nA
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = –250 µA
–1 –1.7 –3
V
ID = –250 µA, Referenced to 25°C
5
mV/°C
VGS = –10 V, ID = –6.5 A
VGS = –4.5 V, ID = –5.2 A
VGS=–10 V, ID =–6.5A, TJ=125°C
15
19
mΩ
21 30
19 30
VGS = –10 V, VDS = –5 V
–20
A
VDS = –10 V, ID = –6.5 A
24
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
1604
pF
408
pF
202
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
VDS = –15 V, ID = –6.5 A,
VGS = –10 V
13 30
ns
13.5 30
ns
42 110 ns
25 60
ns
17 70
nC
5
nC
6
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.1 A (Note 2)
–1.1
A
–0.7 –1.2
V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) R_θJA is 87 °C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R_θJA is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si6415DQ Rev B(W)