SI4920DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Dual N-Channel, Logic Level, PowerTrench MOSFET

Typical Electrical Characteristics
10
ID = 6A
8
6
V_DS = 5V
10V
15V
4
2
0
0
3
6
9
12
15
18
Q_g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
50
10
RDS(ON) ^LIMIT
2
0.5
V_GS =10V
SINGLE PULSE
0.05 ^RθJA ^{= 135°C/W}
T_A ^A= 25°C
100us
1ms
1001m0ms ^s
1s
D1C0s
0.01
0.1
0.5 1
2
5 10
V_DS , DRAIN-SOURCE VOLTAGE (V)
30 50
1500
500
C iss
200
100
50 _{f = 1 MHz}
V _GS = 0 V
Coss
C rss
0.1 0.2
0.5
1
2
5
10
30
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA =135 °C/W
TA = 25°C
0.1
0.5
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA =135° C/W
P(pk)
t_{1 t 2}
T_J - T_A = P * R_θJA (t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
Si4920DY Rev.A