SI4920DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Dual N-Channel, Logic Level, PowerTrench MOSFET

Typical Electrical Characteristics
40
V_GS=10V _5.5V
4.5V
32
4.0V
24
3.5V
16
3.0V
8
2.5V
0
0
1
2
3
4
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D = 6A
1.4 ^VGS ^{= 10V}
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
25
VDS =5.0V
20
15
T_J = -55°C
25°C
125°C
10
5
0
1
2
3
4
5
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
4
V _GS= 2.5V
3
3.0 V
2
3.5 V
4.5 V
1
10V
0
0
6
12
18
24
30
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
0.12
0.09
0.06
0.03
0
0
ID = 3A
T_A = 125°C
25°C
2
4
6
8
10
V _GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
V_GS= 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4920DYA Rev.A