SI4884DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Typical Electrical And Thermal Characteristics
10
I_D = 11.5A
8
6
V_DS = 10V
15V
20V
4
2
0
0
10
20
30
40
Q _g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
50
20
RDS(ON) ^LIMIT
10
3
1
V_GS = 10V
0.1
SINGLE PULSE
R_θJA = See Note 1c
T_A = 25°C
100us
1ms
10ms
100ms
1s
10s
DC
0.01
0.1 0.2
0.5 1
2
5 10
30 50
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
3000
2000
C _iss
1000
500
C _oss
200
100
0.1
f = 1 MHz
V_GS = 0V
C _rss
0.2
0.5
1
2
5
10
V_DS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
R_θJA =See Note 1c
T_A = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA =See Note 1c
P(pk)
t1
t₂
T_J - T_A = P * R_θJA (t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4884DY Rev.A