SI4884DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Typical Electrical Characteristics
50
V_GS= 10V
6.0
40 _5.0
4.5
4.0
30
3.5
20
10
3.0
0
0
0.5
1
1.5
2
2.5
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
I_D = 11.5A
1.6 ^VGS ^=10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
50
V_DS = 10V
40
T_J = -55°C
25°C
125°C
30
20
10
0
0
1
2
3
4
5
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
2.5
V_GS = 3.5V
2
4.0
4.5
1.5
5.0
6.0
1
10
0.5
0
10
20
30
40
50
I _D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
ID = 11.5A
0.03
0.02
0.01
0
2
T_A = 125 ^oC
T_A = 25 ^oC
4
6
8
10
V_GS ,GATE-SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
V_GS =0V
10
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4884DY Rev.A