SI4874DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrencha MOSFET

Typical Electrical Thermal Characteristics
10
I _D = 13A
8
6
V_DS= 5V
10V
15V
4
2
0
0
10
20
30
40
50
60
70
80
Q _g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
30
RDS(ON) ^LIMIT
10
5
2
1
0.5
VGS =10V
0.1 ^{SINGLE PULSE}
0.05
R_θTJAA=_{A=12255°°CC/W}
100us
1ms
10ms
1s^100ms
10s
DC
0.01
0.05 0.1
0.5 1 2
5 10
V_DS , DRAIN-SOURCE VOLTAGE (V)
30 50
Figure 9. Maximum Safe Operating Area.
7000
4000
2000
C iss
1000
Coss
500
f = 1 MHz
200 _{VGS = 0 V}
C rss
100
0.1 0.2
0.5
1
2
5
10
30
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
R_θJA =125°C/W
T_A = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA = 125°C/W
P(pk)
t1
t₂
T_J - T_A = P * R _θJA(t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4874DY Rev.A