SI4874DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrencha MOSFET

Typical Electrical Characteristics
50
VGS =10V
5.5V
40
4.5V
3.5V
3.0V
30
20
10
2.5V
0
0
0.5
1
1.5
2
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D = 13A
1.4 ^{VGS = 10V}
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
60
V_DS = 5.0V
50
40
30
20
T_J =125°C
10
25°C
-55°C
0
1
1.5
2
2.5
3
3.5
4
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5 . Transfer Characteristics.
2.5
V_GS = 3.0V
2
1.5
1
3.5 V
4.0 V
4.5 V
6.0 V
10V
0.5
0
10
20
30
40
50
I _D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.03
0.025
0.02
0.015
0.01
0.005
0
2
I_D = 6.5A
T_A = 125°C
25°C
4
6
8
10
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 4 . On Resistance Variation with
Gate-to-Source Voltage.
40
V_GS = 0V
5
1
0.1
0.01
T_J = 125°C
25°C
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V _SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4874DY Rev.A