SGW5N60RUFD Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

700
Common Emitter
V = 0V, f = 1MHz
GE
600
T = 25℃
C
500
400
Cies
300
200
Coes
100
Cres
0
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 5A
C
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Tf
Toff
Tf
100
10
100
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V =±
GE
15V,
R
G
=
40Ω
T_C = 25℃ ━━
T = 125℃ ------
C
100
Ton
Tr
10
3
4
5
6
7
8
9
10
Collector Current, I_C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Common Emitter
V = 300V, V = ± 15V
CC
GE
I_C = 5A
T_C = 25℃ ━━
100
T = 125℃ ------
C
Ton
Tr
10
10
100
Gate Resistance, R_G [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Eoff
Eon
100
Eoff
10
10
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 5A
T = 25℃ ━━
C
T_C = 125℃ ------
100
Gate Resistance, R_G [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_GE = ± 15V, R_G = 40Ω
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Tf
Toff
Tf
100
3
4
5
6
7
8
9
10
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGW5N60RUFD Rev. A1