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SGW5N60RUFD Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 5mA, VCE = VGE
IC = 5A, VGE = 15V
IC = 8A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCC = 300 V, IC = 5A,
RG = 40Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 5A,
RG = 40Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 5A,
VGE = 15V
Measured 5mm from PKG
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
6.0
8.5
V
--
2.2 2.8
V
--
2.5
--
V
--
354
--
pF
--
67
--
pF
--
14
--
pF
--
13
--
ns
--
24
--
ns
--
34
50
ns
--
136 200
ns
--
88
--
uJ
--
107
--
uJ
--
195 280
uJ
--
13
--
ns
--
26
--
ns
--
40
60
ns
--
250 350
ns
--
103
--
uJ
--
220
--
uJ
--
323
--
uJ
10
--
--
us
--
16
24
nC
--
3
6
nC
--
7
14
nC
--
7.5
--
nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
IF = 8A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF = 8A,
di/dt = 200 A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
37
55
3.5
4.5
65
124
Max.
1.7
--
55
--
5.0
--
138
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGW5N60RUFD Rev. A1
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