RFP3055 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

RFD3055, RFD3055SM, RFP3055
Typical Performance Curves Unless Otherwise Specified (Continued)
50
10
STARTING T_J = 150^oC
STARTING T_J = 25^oC
If R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
IF R ≠ 0
t_AV = (L/R) ln [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
1
0.001
0.01
0.1
1
t_AV, TIME IN AVALANCHE (ms)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
24
V_DS = 15V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
18
12
-55^oC
25^oC
175^oC
6
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2.0
V_GS = V_DS, I_D = 250µA
1.5
24
PULSE DURATION = 80µs
V_GS = 10V
DUTY CYCLE = 0.5% MAX
18
V_GS = 8V
V_GS = 7V
12
V_GS = 6V
6
V_GS = 5V
V_GS = 4.5V
0
0
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 ^{VGS = 10V, ID = 12A}
1.5
1.0
0.5
0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
I_D = 250µA
1.5
1.0
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
©2002 Fairchild Semiconductor Corporation
1.0
0.5
0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
RFD3055, RFD3055SM, RFP3055 Rev. B