RFP3055 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

RFD3055, RFD3055SM, RFP3055
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFD3055, RFD3055SM, RFP3055
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Single Pulse Avalanche Rating (Figures 14, 15) . . . . . . . . . . . . . . . . . . . . . . . . . . I_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
60
60
±20
12
Refer to Peak Current Curve
Refer to UIS Curve
53
0.357
-55 to 175
300
260
V
V
V
A
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
BV _DSS
V _GS(TH)
I _DSS
I _GSS
r _DS(ON)
t _ON
t _d(ON)
t_r
t _d(OFF)
t_f
t _OFF
Q _g(TOT)
Q _g(10)
Q _g(TH)
I_D = 250µA, V_GS = 0V (Figure 11)
V_GS = V_DS, I_D = 250µA (Figure 10)
V_DS = Rated BV_DSS, V_GS = 0V
T_C = 125^oC, V_DS = 0.8 x Rated BV_DSS
V_GS = ±20V
I_D = 12A, V_GS = 10V (Figure 9) (Note 2)
V_DD = 30V, I_D = 12A
R_L = 2.5Ω, V_GS = +10V
R_G = 10Ω
(Figure 13)
V_GS = 0 to 20V
V_GS = 0 to 10V
V_GS = 0 to 2V
V_DD = 48V,I_D = 12A,
R_L = 4Ω,
I_g(REF) = 0.24mA
(Figure 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C _ISS
C _OSS
C _RSS
R_θJC
R _{θ JA}
V_DS = 25V, V_GS = 0V,
f = 1MHz (Figure 12)
TO-251 and TO-252
TO-220
MIN TYP MAX UNITS
60
-
-
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
100
nA
-
-
0.150
Ω
-
-
40
ns
-
7
-
ns
-
21
-
ns
-
16
-
ns
-
10
-
ns
-
-
40
ns
-
19
23
nC
-
10
12
nC
-
0.6
0.8
nC
-
300
-
pF
-
100
-
pF
-
30
-
pF
-
-
2.8
o_C/W
-
-
100
o_C/W
-
-
62.5
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage
V _SD
I_SD = 12A
-
-
1.5
V
Reverse Recovery Time
t _rr
I_SD = 12A, dI_SD/dt = 100A/µs
-
-
100
ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev. B