RFG60P03 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves (Continued)
PULSE DURATION = 250µs, V_GS = -10V, I_D = -60A
2.0
2.0
V_GS = V_DS, I_D = - 250µA
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED r_DS(ON) vs JUNCTION
TEMPERATURE
0.0
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
I_D = -250µA
2.0
1.5
1.0
0.5
0.0
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS
5000
4000
3000
2000
1000
V_GS = 0V, f = 1MHz
C_ISS
C_OSS
C_RSS
-30.0
-22.5
-15.0
-7.5
V_DD = BV_DSS
V_DD = BV_DSS
R_L = 0.5Ω
I_G(REF) = -3mA
V_GS = -10V
0.75 BV_{DSS 0.75 BVDSS}
0.50 BV_{DSS 0.50 BVDSS}
0.25 BV_{DSS 0.25 BVDSS}
-10.0
-7.5
-5.0
-2.5
0
0
-5
-10
-15
-20
-25
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
0.0
I_G(REF)
20
I_G(ACT)
t, TIME (µs)
0.0
I_G(REF)
80
I_G(ACT)
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
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