RFG60P03 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves
-500
-100
T_C = +25^oC
100µs
1ms
-10
-1
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
V_DSS MAX = -30V
10ms
100ms
DC
-10
-60
V_DS , DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1. SAFE OPERATING AREA CURVE
10
1
0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10^-5
10^-4
10^-3
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC + T_C
10^-2
10^-1
10⁰
10¹
t , RECTANGULAR PULSE DURATION (s)
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
-70
-60
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
T_C , CASE TEMPERATURE (^oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
-10³
V_GS = -20V
T_C = +25^oC
FOR TEMPERATURES ABOVE +25^oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

I
=
I25


1----7---5-1---5-–_{--0--T----C---}
V_GS = -10V
-10²
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-50
10^-6 10^-5 10^-4
10^-3
10^-2
10^-1 10⁰
10¹
t , PULSE WIDTH (ms)
FIGURE 4. PEAK CURRENT CAPABILITY
-120
V_GS = -20V
-90
PULSE DURATION = 250µs, T_C = +25^oC
V_GS = -10V
V_GS = -8V
-60
V_GS = -7V
-30
0
0.0
V_GS = -4.5V
V_GS = -6V
V_GS = -5V
-1.5
-3.0
-4.5
-6.0
-7.5
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
-120
-90
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-60
V_DD = -15V
-55^oC
+25^oC
+175^oC
-30
0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
V_GS , GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
4-53