RFG45N06_02 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 45A, 60V, 0.028 Ohm, N-Channel Power

RFG45N06, RFP45N06, RF1S45N06SM
Typical Performance Curves Unless Otherwise Specified (Continued)
300
100
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
If R ≠ 0
1 ^{tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]}
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
125
100
75
50
25
0
0
V_GS = 10V
V_GS = 8V
V_GS = 7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
V_GS = 6V
V_GS = 5V
V_GS = 4.5V
1.5
3
4.5
6
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
125
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
100 ^{VDD = 15V}
75
-55^oC
25^oC
175^oC
50
25
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V_GS = 10V, I_D = 45A
2
1.5
1
0.5
0
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS, I_D = 250µA
1.5
2.0
I_D = 250µA
1.5
1.0
1.0
0.5
0
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFG45N06, RFP45N06, RF1S45N06SM Rev. B