RFG45N06_02 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 45A, 60V, 0.028 Ohm, N-Channel Power

RFG45N06, RFP45N06, RF1S45N06SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFG45N06, RFP45N06
RF1S45N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_G = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
60
60
45
Refer to Peak Current Curve
±20
Refer to UIS Curve
131
0.877
-55 to 175
300
260
V
V
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
BV_DSS I_D = 250µA, V_GS = 0V (Figure 11)
60
V_GS(TH) V_GS = V_DS, I_D = 250µA (Figure 10)
2
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V (125^oC)
-
I_GSS V_GS = ±20V
-
r_DS(ON) I_D = 45A, V_GS = 10V (Figure 9)
-
t _ON
V_DD = 30V, I_D = 45A
-
t _d(ON)
R_L = 0.667Ω, V_GS = +10V
R_G = 3.6Ω (Figure 13)
-
t_r
-
-
-
V
-
4
V
-
1
µA
-
25
µA
-
±100
nA
-
0.028
Ω
-
120
ns
12
-
ns
74
-
ns
Turn-Off Delay Time
t _d(OFF)
-
37
-
ns
Fall Time
Turn-Off Time
t_f
t _OFF
-
16
-
ns
-
-
80
ns
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Q _g(TOT)
Q _g(10)
Q _g(TH)
V_GS = 0 to 20V
V_GS = 0 to 10V
V_GS = 0 to 2V
V_DD = 48V, I_D = 45A,
R_L = 1.07Ω
I_g(REF) = 1.5mA
(Figure 13)
-
125 150
nC
-
67
80
nC
-
3.7
4.5
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C _ISS
C _OSS
C _RSS
R_θJC
R _{θ JA}
V_DS = 25V, V_GS = 0V
f = 1MHz (Figure 12)
-
2050
-
pF
-
600
-
pF
-
200
-
pF
-
-
1.14 ^oC/W
-
-
80
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage
V _SD
I_SD = 45A
-
-
1.5
V
Diode Reverse Recovery Time
t _rr
I_SD = 45A, dI_SD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2002 Fairchild Semiconductor Corporation
RFG45N06, RFP45N06, RF1S45N06SM Rev. B