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RFD16N05 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05, RFD16N05SM
Typical Performance Curves Unless Otherwise Specified (Continued)
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
50
VGS = 20V VGS = 10V
VGS = 8V
VGS = 7V
40
PULSE DURATION = 80µs
30
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 6V
20
10
VGS = 5V
VGS = 4.5V
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
50
VDD = 15V
PULSE DURATION = 80µs
40 DUTY CYCLE = 0.5% MAX
-55oC
30
175oC
25oC
20
10
0
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 VGS = 10V, ID = 16A
1.5
1.0
0.5
0
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAINTO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
VGS = VDS, ID = 250µA
1.5
2.0
ID = 250µA
1.5
1.0
1.0
0.5
0
-80 -40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
0.5
0
-80 -40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
RFD16N05, RFD16N05SM Rev. B