RFD16N05 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

RFD16N05, RFD16N05SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFD16N05, RFD16N05SM,
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
50
V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
50
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
16
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Refer to Peak Current Curve
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
± 20
V
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Refer to Figure 5
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate above 25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
72
W
0.48
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
BV _DSS
V _GS(TH)
I _DSS
I_D = 250µA, V_GS = 0V (Figure 11)
V_GS = V_DS, I_D = 250µA
V_DS = Rated BV_DSS, V_GS = 0V
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
I _GSS
r _DS(ON)
t _(ON)
t _d(ON)
t_r
V_DS
T_C =
= 0.8 x
150^oC
Rated
BV_DSS,
V_GS
=
0V,
V_GS = ±20V
I_D = 16A, V_GS = 10V (Figure 9)
V_DD = 25V, I_D = 8A, R_L = 3.125Ω,
V_GS = 10V, R_GS = 25Ω
(Figure 13)
Turn-Off Delay Time
Fall Time
t _d(OFF)
t_f
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
t _(OFF)
Q _g(TOT)
Q _g(10)
Q _(TH)
V_GS = 0V to 20V
V_GS = 0V to 10V
V_GS = 0V to 2V
V_DD = 40V, I_D ≈ 16A,
R_L = 2.5Ω
I_g(REF) = 0.8mA
(Figure 13)
Input Capacitance
Output Capacitance
C _ISS
C _OSS
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 12)
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C _RSS
R_θJC
R _{θ JA}
TO-251 and TO-252
MIN TYP MAX UNITS
50
-
-
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
±100 nA
-
-
0.047 Ω
-
-
65
ns
-
14
-
ns
-
30
-
ns
-
55
-
ns
-
30
-
ns
-
-
125
ns
-
-
80
nC
-
-
45
nC
-
-
2.2
nC
-
900
-
pF
-
325
-
pF
-
100
-
pF
-
-
2.083 ^oC/W
-
-
100 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Source to Drain Diode Voltage
V_SD I_SD = 16A
-
-
1.5
V
Diode Reverse Recovery Time
t _rr
I_SD = 16A, dI_SD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤ 250µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2002 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B