J108 Datasheet, PDF (4/4 Pages) NXP Semiconductors – N-channel silicon junction FETs

Typical Characteristics (continued)
On Resistance vs Drain Current
100
50
V_GS = 0
V _GS(off)= - 3.0V
12 5°C
10
12 5°C
5
25 °C
25 °C
- 55°C
V _GS(off)= - 5.0V
1
1
10
100
I _D - DRAIN CURRENT (mA)
Transconductance
vs Drain Current
100
T _A = 25°C
T _A = - 55°C
V _DG = 10V
T _A = 25°C
f = 1.0 kHz
T _A = 125°C
10
1
0.1
V _GS(off) = - 1.0V
V_GS(off) = - 3.0V
V _GS(off) = - 5.0V
1
10
I _D - DRAIN CURRENT (mA)
N-Channel Switch
(continued)
Output Conductance
vs Drain Current
100
V _DG = 5.0V
10V
V_GS(off) 5.0V
15V
20V
- 4.0V
10V
5.0V
10
15V
10V
20V
15V
- 2.0V
20V
T _A = 25°C
1
0.1
- 1.0V
f = 1.0 kHz
1
10
I _D - DRAIN CURRENT (mA)
350
300
250
200
150
100
50
0
0
Power Dissipation vs
Ambient Temperature
TO-92
25
50
75
100 125 150
TEMPERATURE ( ^oC)