J108 Datasheet, PDF (1/4 Pages) NXP Semiconductors – N-channel silicon junction FETs

J108
J109
J110
Discrete POWER & Signal
Technologies
G
SD
TO-92
N-Channel Switch
This device is designed for analog or digital switching applications where
very low on resistance is mandatory. Sourced from Process 58.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DG
VGS
I_GF
T_J, T_stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
J108 / J109 / J110
350
2.8
125
357
Units
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation