IRFR214B Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IV_DG=^{S =2500V}μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R _DS(on)
10¹
100 µs
1 ms
10⁰
10 ms
DC
10^-1
10^-2
10⁰
※ Notes :
1. T = 25 ^oC
C
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 1.4 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0.5
10⁰
0.2
0.1
0.05
1 0 ^-1
0.02
0.01
sin gle pu lse
※ N otes :
1. Z _{θ JC}(t) = 5.08 ℃ /W M ax.
2. D uty Factor, D =t₁/t₂
3 . T _JM - T _C = P _DM * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S qu a re W ave P u lse D u ra tion [se c]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001