IRFR214B Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
10
8
V = 10V
GS
6
V_GS = 20V
4
2
※ Note : T = 25℃
J
0
0
2
4
6
8
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
500
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
400
C
iss
300
C
oss
200
C_rss
※ Notes :
100
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10⁰
150^oC
10^-1
2
25^oC
-55^oC
※ Notes :
1. V = 40V
2. 25^DS0μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
2. 25^G0^Sμ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
0
0.0
V_DS = 50V
V_DS = 125V
V_DS = 200V
※ Note : I_D = 2.8 A
1.5
3.0
4.5
6.0
7.5
9.0
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001