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IRFM110A Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET
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IRFM110A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
0.5
1. VGS = 10 V
2. ID = 2.8 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
102
101
100
10-1
10-2
10-1
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
@ Notes :
1. TA = 25 oC
2. TJ = 150 oC
3. Single Pulse
100
101
102
VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Ambient Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TA , Ambient Temperature [ oC]
Fig 11. Thermal Response
102
D=0.5
0.2
101
0.1
0.05
0.02
100 0.01
@ Notes :
1. Zθ J A(t)=62 o C/W Max.
2. Duty Factor, D=t1 /t2
3. TJ M -TA =PD M*Zθ J A(t)
PDM
single pulse
t1
t2
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
102
103
t1 , Square Wave Pulse Duration [sec]
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