IRF510A Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

IRF510A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. V_GS = 0 V
2. I_D = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175 200
T_J , Junction Temperature [^oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
0.5
1. V_GS = 10 V
2. I_D = 2.8 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
T_J , Junction Temperature [^oC]
10²
10¹
10⁰
10^-1
10⁰
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R _DS(on)
100 µs
1 ms
10 ms
DC
@ Notes :
1. T_C = 25 ^oC
2. T_J = 175 ^oC
3. Single Pulse
10¹
10²
V_DS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
175
T_c , Case Temperature [^oC]
Fig 11. Thermal Response
D=0.5
10⁰ 0.2
0.1
0.05
0.02
10^{- 1 0.01}
single pulse
@ Notes :
1.
Z
θ
J
C
(t)=4.51
o _C/W
Max.
2. Duty Factor, D=t₁/t₂
3.
T_J
M
-T_C
=P_D
M
*Z
θ
J
C
(t)
P
DM
t
1
t₂
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
10⁰
10¹
t₁ , Square Wave Pulse Duration [sec]