IRF510A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
IRF510A
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175°C Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ V_DS = 100V
n Lower R_DS(ON) : 0.289 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25℃)
Continuous Drain Current (T_C=100℃)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(2)
Total Power Dissipation (T_C=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
BV_DSS = 100 V
R_DS(on) = 0.4 Ω
I_D = 5.6 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
100
5.6
4
20
±20
63
5.6
3.3
6.5
33
0.22
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
4.51
--
62.5
Units
°C/W
Rev. B1