HUFA76413DK8T Datasheet, PDF (4/11 Pages) Fairchild Semiconductor – N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ

Typical Characteristics T_A = 25°C unless otherwise noted
200
100
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
1
SINGLE PULSE
T_J = MAX RATED
T_A = 25^oC
10ms
0.2
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
15
If R = 0
10
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
STARTING T_J = 25^oC
STARTING T_J = 150^oC
1
0.1
1
10
40
t_AV, TIME IN AVALANCHE (ms)
Figure 6. Unclamped Inductive Switching
Capability
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
V_DD = 15V
25
V_GS = 10V
V_GS = 5V
20
V_GS = 3.5V
15
T_J = 150^oC
10
T_J = 25^oC
5
T_J = -55^oC
0
1.5
2.0
2.5
3.0
3.5
4.0
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
15
V_GS = 3V
10
5
0
0
T_A = 25^oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
100
90
I_D = 5.1A
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
70
60
I_D = 1A
50
40
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
-80
V_GS = 10V, I_D =5.1A
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation
Rev. B