HUFA76413DK8T Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ

January 2003
HUFA76413DK8T
N-Channel Logic Level UltraFET^® Power MOSFET
60V, 4.8A, 56mΩ
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET^® process. This advanced pro-
cess technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding perfor-
mance. This device is capable of withstanding high energy
in the avalanche mode and the diode exhibits very low re-
verse recovery time and stored charge. It was designed for
use in applications where power efficiency is important,
such as switching regulators, switching convertors, motor
drivers, relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Applications
• Motor and Load Control
• Powertrain Management
Features
• 150°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance r_DS(ON) = 0.049Ω, V_GS = 10V
• Ultra-Low On-Resistance r_DS(ON) = 0.056Ω, V_GS = 5V
D1 (8) D1 (7)
D2 (6) D2 (5)
1
SO-8
S1 (1) G1 (2)
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 25^oC, V_GS = 5V)
Continuous (T_C = 125^oC, V_GS = 5V, R_θJA = 228^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
S2 (3) G2 (4)
Ratings
60
±16
5.1
4.8
1
Figure 4
260
2.5
0.02
-55 to 150
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
R_θJA
R_θJA
R_θJA
Thermal Resistance Junction to Ambient SO-8 (Note 2)
Thermal Resistance Junction to Ambient SO-8 (Note 3)
Thermal Resistance Junction to Ambient SO-8 (Note 4)
50
o_C/W
191
o_C/W
228
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
Rev. B