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FR011L5J Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – Low-Side Reverse Bias Reverse Polarity Protector
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Positive Bias Characteristics
RON Device Resistance, Switch On
Input Voltage, VIN, at which Voltage
VON
at POS, VPOS, Reaches a Certain
Level at Given Current
∆VON / ∆TJ Temperature Coefficient of VON
IDIODE_CONT Continuous Diode Forward Current
VF
Diode Forward Voltage
VIN = +4V, IIN = 1.5A
VIN = +5V, IIN = 1.5A
VIN = +5V, IIN = 1.5A,
TJ = 125°C
VIN = +12V, IIN = 1.5A
IIN = 100mA, VPOS = 45mV,
VNEG = 0V
VCTL = VPOS
VCTL = VPOS, IDIODE = 0.1A,
Pulse width < 300µs
IBIAS
Bias Current Flowing out of NEG Pin VCTL = 5V, VNEG = 0V,
during Normal Bias Operation
No Load
Negative Bias Characteristics
V- MAX_OP
∆V- MAX_OP
/ ∆TJ
I-
Reverse Bias Breakdown Voltage
Reverse Bias Breakdown Voltage
Temperature Coefficient
Leakage Current from NEG to POS
in Reverse-Bias Condition
IIN = -250µA, VCTL = VPOS = 0V
VNEG = 20V, VCTL = VPOS = 0V
tRN
Time to Respond to Negative Bias
Condition
VNEG = 5V, VCTL = 0V, CLOAD =
10µF, Reverse Bias Startup
Inrush Current = 0.2A
Dynamic Characteristics
CI
Input Capacitance between CTL and
NEG
CS
Switch Capacitance between POS
and NEG
VIN = -5V, VCTL = VPOS = 0V, f
= 1MHz
CO
Output Capacitance between CTL
and POS
RC
Control Internal Resistance
Min.
1.4
0.56
Typ.
13
11
15
9
2.4
-3.9
0.60
15
16
1
1011
81
1456
1.7
Max. Unit
20
15
mΩ
13
3.5
V
mV/°C
2
A
0.73
V
nA
-30
V
mV/°C
µA
50
ns
pF
Ω
© 2012 Fairchild Semiconductor Corporation
FR011L5J • Rev. C2
4
www.fairchildsemi.com