FQU1N60C Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IV_DG=^{S =2500V}μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
10¹
10⁰
10^-1
10^-2
10⁰
Operation in This Area
is Limited by R _DS(on)
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 0.5 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
D =0.5
10⁰
0 .2
0 .1
0 .0 5
1 0^-1
0 .0 2
0 .0 1
sin g le p u lse
※ N ote s :
1 . Z _{θ JC}(t) = 4 .53 ℃ /W M ax .
2 . D u ty F a c to r, D = t₁/t₂
3 . T _JM - T _C = P _DM * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0^-1
10⁰
10¹
t , S q ua re W a ve P ulse D uration [se c]
1
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003