FQU1N60C Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
10⁰
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
30
25
20
15
10
5
0
0.0
V_GS = 10V
V = 20V
GS
※ Note : T_J = 25℃
0.5
1.0
1.5
2.0
2.5
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
250
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
200
C
iss
150
C
oss
100
※ Notes ;
50
C_rss
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
10⁰
150^oC
25^oC
-55^oC
10^-1
2
※ Notes :
1.
2.
V25_DS0μ=
40V
s Pulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V_GS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 120V
V_DS = 300V
8
V_DS = 480V
6
4
2
※ Note : I_D = 1A
0
0
1
2
3
4
5
6
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, November 2003