FQU17P06TU Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ

Typical Performance Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
∝ Notes :
1. V_GS = 0 V
2. I_D = -250 レA
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
10²
is Limited by R _DS(on)
100 µs
1 ms
10¹
10 ms
DC
10⁰
∝ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-1
10⁰
10¹
10²
-V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
∝ Notes :
1. V_GS = -10 V
2. I_D = -6.0 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [∩ ]
Figure 10. Maximum Drain Current
vs. Case Temperature
10⁰
1 0 ^-1
D = 0.5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
∝ N otes :
1 . Z _{ヨ JC}(t) = 2 .8 5 ∩ /W M a x .
2 . D u ty F a cto r, D = t₁/t₂
3 . T _JM - T _C = P _{D M} * Z _{ヨ JC}(t)
P_DM
t₁
t₂
1 0 ^-2
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
4
FQD17P06 / FQU17P06 Rev C3
www.fairchildsemi.com