FQU17P06TU Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ

April 2014
FQD17P06 / FQU17P06
P-Channel QFET^® MOSFET
-60 V, -12 A, 135 mΩ
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
Features
• -12 A, -60 V, R_DS(on) = 135 mΩ (Max.) @ V_GS = -10 V, I_D = -6 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 80 pF)
• 100% Avalanche Tested
G
S
D
D-PAK
GDS
S
G
I-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds.
D
FQD17P06 / FQU17P06
-60
-12
-7.6
-48
± 25
300
-12
4.4
-7.0
2.5
44
0.35
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_θJC
R_θJA
R_θJA
Parameter
FQD17P06 / FQU17P06
Thermal Resistance, Junction-to-Case, Max.
2.85
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
110
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
50
* When mounted on the minimum pad size recommended (PCB Mount)
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
1
FQD17P06 / FQU17P06 Rev C3
www.fairchildsemi.com